Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers
نویسندگان
چکیده
Metal-insulator-metal (MIM) tunnel diodes on a variety of high and low work function metals with various levels of root-mean-square roughness are fabricated using high quality atomic layer deposited Al2O3 as the insulating tunnel barrier. It is found that electrode surface roughness can dominate the current versus voltage characteristics of MIM diodes, even overwhelming the impact of metal work function. Devices with smoother bottom electrodes are found to produce current versus voltage behavior with higher asymmetry and better agreement with Fowler-Nordheim tunneling theory, as well as a greater percentage of functioning devices. VC 2012 American Vacuum Society. [DOI: 10.1116/1.3658380]
منابع مشابه
Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling
Articles you may be interested in Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes J. Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes Appl. Impact...
متن کاملStep tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications
We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction proces...
متن کاملIntegrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions.
Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel ...
متن کاملInvestigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
Articles you may be interested in Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO 4 film Appl. Influence of the electrode material on Hf O 2 metal-insulator-metal capacitors High-temperature conduction behavior...
متن کاملMetal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barr...
متن کامل